Investigation of a photogalvanic effect observed under illumination of a metal-semiconductor junction when the optical radiation is completely absorbed by the metal film

The processes associated with the absorption of light by a metal film invol ved in a metal-semiconductor structure are considered. The magnitude of the photoemission current from metal into semiconductor is determined under th e illumination of the Schottky barrier. On the basis of this expression, th e photoelectromotive force developed across the metal-semiconductor junctio n under the complete absorption of optical radiation by the metal is determ ined. Theoretical dependence of the photoelectromotive force on the film th ickness is demonstrated for various values of the wavelength and power of o ptical radiation.