Investigation of a photogalvanic effect observed under illumination of a metal-semiconductor junction when the optical radiation is completely absorbed by the metal film
Ng. Tarnovskii et al., Investigation of a photogalvanic effect observed under illumination of a metal-semiconductor junction when the optical radiation is completely absorbed by the metal film, J COMMUN T, 44(8), 1999, pp. 932-938
Citations number
13
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
The processes associated with the absorption of light by a metal film invol
ved in a metal-semiconductor structure are considered. The magnitude of the
photoemission current from metal into semiconductor is determined under th
e illumination of the Schottky barrier. On the basis of this expression, th
e photoelectromotive force developed across the metal-semiconductor junctio
n under the complete absorption of optical radiation by the metal is determ
ined. Theoretical dependence of the photoelectromotive force on the film th
ickness is demonstrated for various values of the wavelength and power of o
ptical radiation.