Kinetic model of the epitaxial growth in the presence of Schwoebel barriers

Authors
Citation
Vi. Trofimov, Kinetic model of the epitaxial growth in the presence of Schwoebel barriers, J COMMUN T, 44(11), 1999, pp. 1246-1251
Citations number
16
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
ISSN journal
10642269 → ACNP
Volume
44
Issue
11
Year of publication
1999
Pages
1246 - 1251
Database
ISI
SICI code
1064-2269(199911)44:11<1246:KMOTEG>2.0.ZU;2-9
Abstract
The kinetic model of the epitaxial growth is developed that takes into acco unt the existence of the Schwoebel diffusion barriers at the edges of two-d imensional islets. The kinetic equations are derived that describe the laye r epitaxial growth in the presence of the Schwoebel barriers depending on t he deposition conditions. The results of numerical integration of the equat ions demonstrate the influence of the height of the Schwoebel barrier on th e kinetics of the transition from the smooth layer-by-layer growth to the r ough three dimensional growth. It is shown that the influence of the barrie r is governed not only by its height but also by the energy of the diffusio n activation on the smooth terrace.