Properties of (111)A and (111)B GaAs molecular-beam epitaxy

Authors
Galiev, GB Mokerov, VG Volkov, VY Imamov, RM Slepnev, YV Khabarov, YV
Citation
Gb. Galiev et al., Properties of (111)A and (111)B GaAs molecular-beam epitaxy, J COMMUN T, 44(11), 1999, pp. 1256-1261
Citations number
13
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
ISSN journal
10642269 → ACNP
Volume
44
Issue
11
Year of publication
1999
Pages
1256 - 1261
Database
ISI
SICI code
1064-2269(199911)44:11<1256:PO(A(G>2.0.ZU;2-I
Abstract
Methods of two- and three-crystal X-ray diffraction and measurements of pho toluminescence (PL) spectra are used to study structural perfection and var iations in the PL spectra shape of GaAs epitaxial layers (ELs) grown by the molecular-beam epitaxy (MBE) technology on substrates with (100), (111)A, and (111)B orientation. A strong influence of arsenic-to-gallium molecular flow-rate ratio gamma on the structural property and shape of the PL spectr a of ELs is revealed. The optimum values of parameter gamma for each of the se substrate orientations are found.