Relaxation-time approximations of quasi-hydrodynamic type in semiconductordevice modelling

Authors
Citation
Rvn. Melnik et H. He, Relaxation-time approximations of quasi-hydrodynamic type in semiconductordevice modelling, MODEL SIM M, 8(2), 2000, pp. 133-149
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING
ISSN journal
09650393 → ACNP
Volume
8
Issue
2
Year of publication
2000
Pages
133 - 149
Database
ISI
SICI code
0965-0393(200003)8:2<133:RAOQTI>2.0.ZU;2-U
Abstract
We analyse mathematical models for the description of carrier transport in semiconductors as a hierarchy of models constructed on the basis of the the relaxation-time concept. In this hierarchy we focus on a reasonable compro mise between drift-diffusion, hydrodynamic, and kinetic models, This compro mise is provided by non-local quasi-hydrodynamic mathematical models descri bing non-equilibrium physical processes in semiconductor devices. Details o f the normalization procedure for the quasi-hydrodynamic system will be giv en along with a transformation of the energy-balance equations to provide c omputationally convenient forms.