Improvement in electrical performance of radiation-damaged silicon solar cells by annealing

We have examined the temperature dependence of radiation damage for silicon solar cells that are exposed to gamma-rays, and attempted the improvement of electrical performance of radiation-damaged solar cells via annealing. T he power output of the solar cells was measured continuously during gamma-i rradiation and annealing. Although the power output decreases with increasi ng temperature during gamma-irradiation, the resistance against radiation d amage with respect to the power output was enhanced. When annealed after ga mma-irradiation, the solar cells generated a power output having a structur al form that was determined by the depth or the number of donors or accepte rs existing in the depletion layer of the solar cells. and the electrical p erformance of the solar cells was improved. In addition, solar cells were d amaged by neutron irradiation however, the electrical performance was not i mproved by annealing. (C) 2000 Elsevier Science B.V. All rights reserved.