Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys

Authors
Yonenaga, I Lim, SH Shindo, D
Citation
I. Yonenaga et al., Dislocation dissociation and stacking-fault energies in Ge1-xSix alloys, PHIL MAG L, 80(4), 2000, pp. 193-197
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE LETTERS
ISSN journal
09500839 → ACNP
Volume
80
Issue
4
Year of publication
2000
Pages
193 - 197
Database
ISI
SICI code
0950-0839(200004)80:4<193:DDASEI>2.0.ZU;2-G
Abstract
Dislocations in deformed Ge1-xSix alloys in the whole range 0 < x < 1 have been investigated by means of weak-beam transmission electron microscopy. T hey are dissociated into Shockley partial dislocations bounding intrinsic s tacking-faults. The intrinsic stacking-fault energy in the alloys decreases from 61 +/- 10 to 55 +/- 10 mJ m(-2) with increasing Si content.