A new method of producing Pt-Ir tips for use in scanning tunneling microsco
py is described. This reproducible method is simple, cheap, fast, and avoid
s the use of hazardous chemicals common in many other methods. Scanning ele
ctron microscopy, time of flight-secondary ion mass spectroscopy, and x-ray
photoelectron spectroscopy have been applied to understand both the chemic
al and morphological changes that occur as a result of the etching. The met
hod has been demonstrated on both stock Pt-Ir wire and commercial tips and
has been found to dramatically enhance image quality. It is also reusable o
n the same tip extending the lifetime of a single tip indefinitely. (C) 200
0 American Institute of Physics. [S0034-6748(00)00904-7].