Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes

Authors
Ghosh, S Hosea, TJC
Citation
S. Ghosh et Tjc. Hosea, Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium-tin-oxide coated electrodes, REV SCI INS, 71(4), 2000, pp. 1911-1912
Citations number
4
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN journal
00346748 → ACNP
Volume
71
Issue
4
Year of publication
2000
Pages
1911 - 1912
Database
ISI
SICI code
0034-6748(200004)71:4<1911:NECOAS>2.0.ZU;2-0
Abstract
We describe an arrangement for nondestructive electroluminescence measureme nts to characterize as-grown semiconductor optoelectronic device structures using indium-tin-oxide film coated on glass as a separate transparent elec trode. The usefulness of this technique, and its applicability over a range of temperatures, are demonstrated by measurements on pieces of bare as-gro wn wafers of two different laser structures. (C) 2000 American Institute of Physics. [S0034-6748(00)01604-X].