Moire pattern in LEED obtained by van der Waals epitaxy of lattice mismatched WS2/MoTe2(0001) heterointerfaces

Thin films of WS, have been grown by van der Waals epitaxy (vdWE) on the ba sal planes of 2H-MoTe2(0001). Despite a lateral mismatch of 10.3%, epitaxia l growth is achieved by metal organic vdWE (MOvdWE). In low energy electron diffraction (LEED) measurements a Moire-like superstructure is observed or iginating from and correlated to the lateral mismatch between film and subs trate. I-V LEED investigations in the course of sequential film growth reve al an undulation of the lattice at the interfaces as the origin of the Moir e-like structure rather than simple multiple scattering between overlayer a nd substrate. (C) 2000 Elsevier Science B.V. All rights reserved.