VISIBLE PHOTOLUMINESCENCE INDUCED IN SI SIO2 SAMPLES BY SI IMPLANTATION/

Implantation-induced visible light emission was studied using 120 and 160 keV Si-ion implantation into Si single crystals covered with thin SiO2 layers of various thicknesses. A visible band centred at around 2 .0 eV was observed from the samples implanted to a dose range of (0.5- 1) x 10(17) cm(-2). After post-annealing at 1100 degrees C in flowing N-2 gas, another visible band located at 1.7 eV was detected for all o f the samples. The photoluminescence intensity was found to correlate with the oxygen concentration in the implantation region, which was es timated using the program TRIM-92 (from 'transport of ions in matter') . A mechanism that may be responsible for the observed light emission was discussed in terms of the so-called three-region model.