A POSITION-SENSITIVE DETECTOR BASED ON AN ITO-SI STRUCTURE

One- and two-dimensional position sensitive detectors based on an ITO- pSi structure have been fabricated and studied. The experimentally mea sured linear dependence between the photovoltage response and the ligh t spot position is explained by a model in which the electric held in silicon in the lateral direction (E-Si) is assumed to be constant. It has been shown that E-Si is inversely proportional to the electron dif fusion length. Using the experimental data the electron diffusion leng th is estimated to be about 1 cm.