Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

Authors
Grenouillet, L Bru-Chevallier, C Guillot, G Gilet, P Duvaut, P Vannuffel, C Million, A Chenevas-Paule, A
Citation
L. Grenouillet et al., Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well, APPL PHYS L, 76(16), 2000, pp. 2241-2243
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
16
Year of publication
2000
Pages
2241 - 2243
Database
ISI
SICI code
0003-6951(20000417)76:16<2241:EOSCLB>2.0.ZU;2-0
Abstract
We report an anomalous temperature dependence of the photoluminescence (PL) spectrum of a 7 nm Ga0.72In0.28N0.028As0.972/GaAs single quantum well. The PL peak energy exhibits an inverted S-shape dependence with temperature. B elow 100 K, the PL integrated intensity shows a temperature dependence simi lar to that of amorphous semiconductors. The observed anomalous behavior is explained by a strong localization of carriers at low temperatures that co uld be induced by the presence of nitrogen. Thermal annealing does not sign ificantly change the anomalous temperature dependence. (C) 2000 American In stitute of Physics. [S0003-6951(00)04116-4].