Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

Citation
K. Prabhakaran et al., Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces, APPL PHYS L, 76(16), 2000, pp. 2244-2246
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
16
Year of publication
2000
Pages
2244 - 2246
Database
ISI
SICI code
0003-6951(20000417)76:16<2244:DDTDPO>2.0.ZU;2-L
Abstract
The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) an d Si(100) surfaces is examined by synchrotron radiation photoelectron spect roscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely, subox ides and dioxides, on both the surfaces. Upon annealing, the oxide layers d ecompose and desorb as monoxides. However, we find that the decomposition p athways are different from each other. On annealing Ge oxides, GeO2 species transform to GeO and remain on the surface and desorb at > 420 degrees C. In contrast, annealing of Si oxides results in the transformation of SiO to SiO2 up to temperatures (similar to 780 degrees C) close to the desorption . At higher temperatures, SiO2 decomposes and desorbs, implying a reverse t ransformation to volatile SiO species. (C) 2000 American Institute of Physi cs. [S0003-6951(00)04816-6].