Microscopic theory of hot-carrier relaxation in semiconductor-based quantum-cascade lasers

A microscopic analysis of basic nonequilibrium phenomena in unipolar quantu m devices is presented. In particular, energy-relaxation processes governin g the hot-carrier dynamics in the active region of GaAs-based quantum-casca de lasers are investigated by means of a generalized ensemble Monte Carlo s imulation. Such analysis is essential in determining the validity range and limitations of purely macroscopic models with respect to basic device para meters, like injection current and temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01516-3].