Mv. Fischetti et Se. Laux, Performance degradation of small silicon devices caused by long-range Coulomb interactions, APPL PHYS L, 76(16), 2000, pp. 2277-2279
In small silicon devices, conduction electrons in the channel are subject t
o long-range Coulomb interactions with electrons in the heavily doped drain
, source, and gate regions. We show that, for devices with channel lengths
shorter than about 40 nm and oxides thinner than 2.5 nm, these interactions
cause a reduction of the electron velocity. We present results obtained us
ing both semiclassical two-dimensional self-consistent Monte Carlo/Poisson
simulations and a quantum-mechanical model based on electron scattering fro
m gate-oxide interface plasmons. (C) 2000 American Institute of Physics. [S
0003-6951(00)03816-X].