Defects in planar Si pn junctions studied with electrically detected magnetic resonance

We report electrically detected magnetic resonance (EDMR) measurements on p lanar Si pn junctions which were isolated via local oxidation of silicon (L OCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe P-b centers at the boundary to the LOCOS isolat ion and an isotropic Si dangling bond related signal which is assumed to be a consequence of ion implantation. The E'H center-a hydrogen-complexed oxy gen vacancy in the SiO2 device isolation-is also detected via EDMR. The EDM R detection mechanism, which is based on resonant changes of the device cur rent, restricts the detected oxide defects to those which are close to the interface. (C) 2000 American Institute of Physics. [S0003-6951(00)03916-4].