MOVPE growth and characterisation of Zn-doped (GaIn)P layers with respect to surface structure and ordering

(GaIn)P grown on (001)GaAs substrates by metal-organic vapour phase epitaxy (MOVPE) is highly ordered material. In this work the effect of Zn doping o n the epitaxial crystal growth, the ordering behaviour and the surface morp hology is investigated. Zn-doped (GaIn)P layers, grown with phosphine (PH3) , tertiarybutylphosphine (TBP) and ditertiarybutylphosphine (DitBuPH) as ph osphorous precursors, reveal a strong drop of the binary growth rate of InP r(InP) with increasing Zn/III ratio, whereas r(GaP), remains nearly consta nt. The Zn doping efficiency and the ordering behaviour are observed to be dependent on the misorientation of the substrates. Finally, the surface mor phology as a function of the different parameters was analysed by atomic fo rce microscopy (AFM), and no considerable change of the growth mechanism wa s found for Zn-doped layers in comparison to undoped layers.