A. Sandhu et S. Jinno, Piezoresistive properties of 3C-SiC films anodically bonded to aluminosilicate glass substrates, ELECTR LETT, 36(6), 2000, pp. 497-498
Current leakage problems observed in conventional 3C-SiC/Si heterojunction
piezoresistive structures at high temperatures have been resolved through t
he anodic bonding of the 3C-SiC thin films onto insulating aluminosilicate
glass substrates having a thermal expansion coefficient close to that of Si
. The gauge factor of such 3C-SiC/SiO2/glass structures was extremely stabl
e up to temperatures as high as 600K with a fluctuation of < 5%.