High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m

Authors
Yarekha, DA Glastre, G Perona, A Rouillard, Y Genty, F Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN
Citation
Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
6
Year of publication
2000
Pages
537 - 539
Database
ISI
SICI code
0013-5194(20000316)36:6<537:HTGQWS>2.0.ZU;2-T
Abstract
Narrow ridge 5 mu m-wide GaInSbAs/GaAlSbAs quantum well (QW) lasers emittin g in the continuous wave (CW) regime at temperatures up to 130 degrees C ha ve been fabricated. The CW threshold current varied between 20 and 35mA at room temperature (RT) The lasers operated in the fundamental spatial mode a nd exhibited single longitudinal mode emission over a wide range of CW oper ation conditions. The emission wavelength increased from 2.26 mu m at RT up to 2.43 mu m at 124 degrees C. The CW output optical power reached 45mW/fa cet at 22 degrees C and exceeded 10mW/facet at 100 degrees C.