Manufacturable GaAsVFET for power switching applications

We have developed a manufacturable process to fabricate high performance Ga As vertical field effect transistors (VFET's), Our process uses ion implant ation to form the gate as opposed to previous VFET processes, which used ep itaxial regrowth or angled evaporation, In this process, trenches 1.2 mu m wide by 0.6 mu m deep with a period of 2.4 mu m are formed by reactive ion etch (RIE) then the gate region is formed at the bottom of the trench by Ar /C ion co-implantation, Current handling capability of these devices exceed s 200 A/cm(2) with a specific on-resistance of 0.25 m Omega-cm(2) and calcu lated delay times of 13.9 ps.