Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

Authors
Su, YK Chang, JR Lu, YT Lin, CL Wu, KM Wu, ZX
Citation
Yk. Su et al., Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature, IEEE ELEC D, 21(4), 2000, pp. 146-148
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
4
Year of publication
2000
Pages
146 - 148
Database
ISI
SICI code
0741-3106(200004)21:4<146:NADRTD>2.0.ZU;2-L
Abstract
We demonstrate a novel Al0.66In0.34As0.85Sb0.15/ In0.53Ga0.47As double-barr ier resonant tunneling diode grown by metalorganic vapor phase epitaxy, A h igh peak-to-valley current ratio of 46 and a peak current density of 22 kA/ cm(2) were obtained at room temperature.