Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

Hybrid packaging techniques, in which the device substrate is different fro m the package substrate, and wire bonding or solder interconnections are us ed, are inadequate for ultrahigh-speed (>100 GHz) wideband applications. By employing wafer-bonding techniques, integrated packaging (IP) technology w as developed, in which devices are fabricated directly on the package subst rate, and the interconnections are made as a part of the device fabrication process. This IP process was used to fabricate uni-traveling-carrier photo diodes (UTC-PD's) integrated with millimeter-wave coplanar waveguides (CPW) on package compatible sapphire with high yield. The performance of wafer-b onded UTC-PD's with 3-dB bandwidth of 102 GHz was similar to that of conven tional devices, and the CPW's exhibited low dispersion.