Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel

We report the concept and demonstration of a nanoscale ultra-thin-body sili con-on-insulator (SOI) P-channel MOSFET with a Si1-xGex/Si heterostructure channel. First, a novel lateral solid-phase epitaxy process is employed to form an ultra-thin-body that suppresses the short-channel effects. Negligib le threshold voltage roil-off is observed down to a channel Length of 50 nm , Second, a selective silicon implant that breaks up the interfacial oxide is shown to facilitate unilateral crystallization to form a single crystall ine channel. Third, the incorporation of SiGe in the channel resulted in a 70% enhancement in the drive current.