Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

In this work, we demonstrate that the magnitude of flatband voltage (V-FB) Shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stack s in MOSFET's depends on the Fermi level position in the gate material. Tn addition, a fixed positive charge at the oxide-nitride interface was observ ed.