A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

Citation
S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets, IEEE ELEC D, 21(4), 2000, pp. 173-175
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
21
Issue
4
Year of publication
2000
Pages
173 - 175
Database
ISI
SICI code
0741-3106(200004)21:4<173:A2PGLN>2.0.ZU;2-E
Abstract
We have demonstrated the feasibility of 20-nm gate length NMOSFET's using a two-step hard-mask etching technique. The gate oxide is 1.2-nm thick, We h ave achieved devices with real N- arsenic implanted extensions and BF2 pock ets. The devices operate reasonably well down to 20-nm physical gate length , These devices are the shortest devices ever reported using a conventional architecture.