S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets, IEEE ELEC D, 21(4), 2000, pp. 173-175
We have demonstrated the feasibility of 20-nm gate length NMOSFET's using a
two-step hard-mask etching technique. The gate oxide is 1.2-nm thick, We h
ave achieved devices with real N- arsenic implanted extensions and BF2 pock
ets. The devices operate reasonably well down to 20-nm physical gate length
, These devices are the shortest devices ever reported using a conventional
architecture.