High voltage GaN Schottky rectifiers

Mesa and planar GaN Schottky diode rectifiers vith reverse breakdown voltag es (V-RB) up to 550 and >2000 V,respectively. hare been fabricated, The on- state resistance, R-ON, was 6 m Ohm.cm(2) and 0.8 Ohm cm(2), respectivetly, producing figure-of-merit values for (V-RB)(2)/R-ON in the range 5-48 MW.c m(-2). At low biases the reverse leakage current was proportional to the si ze of the rectifying contact perimeter, while at high biases the current wa s proportional to the area of this contact. These results suggest that at l ow reverse biases, the leakage is dominated bg the surface component, while at higher biases the bulk component dominates. On state voltages were 3.5 V for the 550 V diodes and greater than or equal to 15 for the 2 kV diodes. Reverse recovery times were <0.2 mu s for devices switched from a forward current density of similar to 500 A.cm(-2) to a reverse bias of 100 V.