Explaining the dependences of the hole and electron mobilities in Si inversion layers

In this work the hole surface roughness-limited mobility in Si MOSFET's is investigated, Based on full-band Monte Carlo simulations and on an equivale nt relaxation-time numerical model? we show that the differences between ho le and electron experimental mobilities are not due to any peculiar physics of the valence hand, They can be instead accounted for by a suitable shape of the power spectrum describing the surface roughness. The new power spec trum explains the experimental dependences of both electron and hole mobili ties using the same surface roughness parameters. Finally the spatial featu res of the roughness described by the new spectrum are discussed and compar ed to those represented by Gaussian and exponential auto-covariance functio ns.