Universal impurity ionization parameters in MIS C-V freeze-out characteristics and direct extraction of surface doping concentration

The carrier freeze out is responsible for a kink-effect near the flat-band voltage in MIS capacitance-voltage (C-V) characteristics. Studying in deep this phenomenon, it has been demonstrated that the flat kink situation is g overned by only two universal and constant parameters. Taking advantage of this particularity, a new method has been proposed and experimentally valid ated, aimed at extracting directly surface doping concentrations and impuri ty ionization energies.