Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

The purpose of this study, based on two-dimensional (2-D) simulation, was t o scale effective channel length and series resistance extraction routines for sub-100 nm CMOS devices. We demonstrate that L-eff- and R-sd-gate-bias dependence extracted using a modified shift-and-ratio (M-S&R) method may no t give accurate results because of a nonnegligible effective mobility depen dence on gate bias. Using a reasonable gate-bias-dependent mobility model, one observes a finite V-g dependence of L-eff and R-sd even for devices wit h degenerately doped drain junction.