Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode

Authors
Su, YK Chang, JR Lu, YT Lin, CL Wu, KM
Citation
Yk. Su et al., Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode, IEEE DEVICE, 47(4), 2000, pp. 895-897
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
4
Year of publication
2000
Pages
895 - 897
Database
ISI
SICI code
0018-9383(200004)47:4<895:NAHFDR>2.0.ZU;2-U
Abstract
We propose an unstrained Al0.66In0.34As0.85Sb0.15/In-0.53 Ga0.47As heterost ructure for double-barrier resonant tunneling diode. A peak-to-valley curre nt ratio of 22.3 and a peak current density of 8.9 kA/cm(2) were achieved f or the unstrained Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As double-barrier tu nneling diode at room temperature.