Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method

Citation
Ba. Andreev et al., Optically active Er-related centers in Si : Er epitaxial layers grown by the sublimation MBE method, IAN FIZ, 64(2), 2000, pp. 269-272
Citations number
10
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
64
Issue
2
Year of publication
2000
Pages
269 - 272
Database
ISI
SICI code
0367-6765(200002)64:2<269:OAECIS>2.0.ZU;2-A