On relation of the photo-electric sensitivity and photoluminescence spectra to the geometrical parameters of the quantum dot layer in the InAs/GaAs heterostructures

Citation
Ia. Karpovich et al., On relation of the photo-electric sensitivity and photoluminescence spectra to the geometrical parameters of the quantum dot layer in the InAs/GaAs heterostructures, IAN FIZ, 64(2), 2000, pp. 313-319
Citations number
10
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
64
Issue
2
Year of publication
2000
Pages
313 - 319
Database
ISI
SICI code
0367-6765(200002)64:2<313:OROTPS>2.0.ZU;2-M