Influence of formation regimes and doping on luminescence properties of nanostructured system SiO2 : Si at ion implantation

Authors
Tetelbaum, DI Gorshkov, ON Trushin, CA Revin, DG Gaponova, DM Eckstein, W
Citation
Di. Tetelbaum et al., Influence of formation regimes and doping on luminescence properties of nanostructured system SiO2 : Si at ion implantation, IAN FIZ, 64(2), 2000, pp. 362-365
Citations number
6
Categorie Soggetti
Physics
Journal title
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA
ISSN journal
03676765 → ACNP
Volume
64
Issue
2
Year of publication
2000
Pages
362 - 365
Database
ISI
SICI code
0367-6765(200002)64:2<362:IOFRAD>2.0.ZU;2-O