A discretization scheme for an extended drift-diffusion model including trap-assisted phenomena

An extended drift-diffusion model is considered to account for the kinetics of electrons trapped in defect states within a semiconductor material. A d iscretization scheme based on Newton-Krylov iterations and mixed finite vol umes is then proposed and applied to the model, even in the presence of Sch ottky contacts (i.e., Robin-type boundary conditions). Numerical results co ncerning the simulation of an electrooptical device in several working cond itions are presented last. (C) 2000 Academic Press.