Aligned diamond nanowhiskers

Citation
Es. Baik et al., Aligned diamond nanowhiskers, J MATER RES, 15(4), 2000, pp. 923-926
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
15
Issue
4
Year of publication
2000
Pages
923 - 926
Database
ISI
SICI code
0884-2914(200004)15:4<923:ADN>2.0.ZU;2-H
Abstract
We investigated the formation of nanowhiskers by means of air plasma dry et ching using diamond films of two different kinds: as-grown diamond films an d films with molybdenum (Mo) deposits. As for the as-grown diamond films, n anowhiskers were found to form preferentially at grain boundaries of diamon d crystals. Auger depth profile analysis of the etched films revealed a pro gressive enrichment by Mo toward the whisker tip, resulting from accidental sputtering of Mo substrate holder. With dry etching of diamond films with preformed Mo deposits, well-aligned whiskers 100 nm in diameter were found to form uniformly over the entire film surface with a population density of 30/mu m(2). From these findings, it follows that Mo deposits serve as micr omasks for the formation of the nanowhiskers. It was; also confirmed that t hese whiskers showed excellent field-emission behavior.