The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

Kim, TW Jung, M Lee, DU Kim, HJ You, YS Cho, JW Yoo, KH Lee, JY Kim, MD

Tw. Kim et al., The dependence of the exciton transition and the Fermi energy on the InyGa1-yAs well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells, J MAT SCI L, 19(9), 2000, pp. 755-757

17

Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering

JOURNAL OF MATERIALS SCIENCE LETTERS

02618028 → ACNP

19

9

2000

755 - 757

ISI

0261-8028(200005)19:9<755:TDOTET>2.0.ZU;2-0