Citation
Dc. Park et al., Photoluminescence from polycrystalline GaN on silicon substrates grown by RF plasma enhanced chemical vapor deposition with ZnO buffer layers, J MAT SCI L, 19(8), 2000, pp. 631-633
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028
→ ACNP
Volume
19
Issue
8
Year of publication
2000
Pages
631 - 633
Database
ISI
SICI code
0261-8028(200004)19:8<631:PFPGOS>2.0.ZU;2-7