In this Letter a novel passivation method for porous silicon (PS) surfaces,
i.e., depositing diamond film on a PS surface by microwave plasma assisted
chemical vapour deposition (MPCVD) method, is reported. The morphologies,
structure and PL of CVD diamond film coated PS were characterized using sca
nning electron microscopy (SEM), Raman spectrum and PL spectroscope. Result
s indicate that efficient luminescence can be obtained from diamond film-co
ated porous silicon Also, the CVD diamond film may efficiently stabilize th
e PL wavelength and intensity of PS, and therefore is a promising candidate
for passivation of porous silicon in the future.