Shallow acceptor impurity states in V-shaped GaAs-Ga1-xAlxAs quantum wires

The shallow acceptor impurity states in V-shaped GaAs-Ga1-xAlx As quantum w ires (V-QWRs) are investigated by a coordinate transformation method. An as ymmetrical distribution of impurity binding energy along the direction norm al to the V-shaped boundaries is found. The impurity position corresponding to the maximum binding energy deviates from the centre of V-QWRs. The vari ations in impurity binding energy with the dimension and curvatures of V-QW Rs are discussed.