FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS GASB/

We report the inducement of a ferromagnetic order by photogenerated ca rriers in a novel III-V-based magnetic semiconductor heterostructure p -(In,Mn)As/GaSb grown by molecular beam epitaxy. At low temperatures ( (35 K), samples preserve ferromagnetic order even-after the light is s witched off, whereas they recover their original paramagnetic conditio n above 35 K. The results are explained in terms of hole transfer from GaSb to InMnAs in the heterostructure, which enhances a ferromagnetic spin exchange among Mn ions in the InMnAs layer.