KINETIC CRITICAL THICKNESS FOR SURFACE-WAVE INSTABILITY VS MISFIT DISLOCATION FORMATION IN GEXSI1-X SI(100) HETEROSTRUCTURES/

The kinetic critical thicknesses for surface wave formation and misfit dislocation generation in UHVCVD-grown GeSi/Si have been quantitative ly determined using microscopical techniques. A refined morphological instability theory has been developed using a coupled continuum/atomis tic treatment that incorporates a nucleation barrier to the onset of s urface wave formation. The theory accurately predicts the onset of sur face wave formation as a function of thickness, composition, temperatu re and deposition rate. The interplay between misfit dislocation gener ation and surface wave formation can be elucidated from two-dimensiona l strain relaxation instability diagrams obtained from a 4-D parameter space.