R. Campostrini et al., Rh inclusion in sol-gel SiO2. Effects of Rh precursors on metal dispersionand SiO2-Rh thermal behavior, J SOL-GEL S, 18(1), 2000, pp. 61-76
RhCl3. nH(2)O and [RhCl(C2H4)(2)](2) are used as precursors for the prepara
tion of 1%Rh in sol-gel derived SiO2. The gelling process of Si(OEt)(4) is
carried out in the absence of solvent and under strong acid catalysis. The
thermal behavior of Rh precursors, of SiO2 gel and Rh-SiO2 composites is in
dependently studied by analysing organic species released at definite tempe
rature intervals and concomitantly collecting infrared, XPS, TEM, XRD and p
orosity data. Results indicate that nanometric Rh particles may be obtained
from [RhCl(C2H4)(2)](2), their dispersion being homogeneous, dense and sta
ble up to 250 degrees C, whereas RhCl3. nH(2)O affords less metallic disper
sion with other crystalline Rh-species; in both cases, well-shaped Rh metal
crystallites are obtained at 650 degrees C. The different synthetic approa
ches used for the preparation of RhCl3- and [RhCl(C2H4)(2)](2)-derived samp
les, are invoked to account for the features of Rh dispersion obtained by m
ild temperature treatment. Moreover, the particular procedures for sol-gel
SiO2 synthesis are related to the high-temperature maintenance of great por
osity and elevated specific surface area.