Surface characterization of silicon nitride films biased in ionic water

The initial stage of oxidation of amorphous hydrogenated silicon nitride (a -SiN:H) films biased in ionic water at room temperature was studied. A stoi chiometric and insulating a-SiN:H film is oxidized chemically to form hydro genated silicon oxynitride and has relatively low reactivity. A Si-rich and semi-insulating a-SiN:H film reacts electrochemically; the anodic oxidatio n proceeds easily to form silicon oxide on the anode, and the precipitation reaction proceeds easily to form silicate or polymerized oxide on the cath ode. The anodic oxidation and the cathodic precipitation reaction mechanism s of: semi-insulating a-SiN:H are discussed briefly. (C) 2000 The Electroch emical Society. S0013-4651(99)08-136-7. All rights reserved.