A NOTE ON COLLECTED-CHARGE FLUCTUATIONS IN SILICON SURFACE-BARRIER DETECTORS AT HEAVY-ION REGISTRATION

Authors
KUSHNIRUK VF TSYGANOV YS
Citation
Vf. Kushniruk et Ys. Tsyganov, A NOTE ON COLLECTED-CHARGE FLUCTUATIONS IN SILICON SURFACE-BARRIER DETECTORS AT HEAVY-ION REGISTRATION, Applied radiation and isotopes, 48(5), 1997, pp. 691-693
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Radiology,Nuclear Medicine & Medical Imaging","Chemistry Inorganic & Nuclear
Journal title
Applied radiation and isotopes
ISSN journal
09698043 → ACNP
Volume
48
Issue
5
Year of publication
1997
Pages
691 - 693
Database
ISI
SICI code
0969-8043(1997)48:5<691:ANOCFI>2.0.ZU;2-B
Abstract
Experimental results on charge losses and resolution in surface-barrie r detectors under irradiation by Xe-136 ions with an energy of about 1 MeV/amu are presented. It is shown that the dependence of resolution on charge losses and on the electric field intensity changes slope in a weak electric field region. It is supposed that this effect implies a mechanism of averaging charge losses due to the radial extension of a plasma column by the ambipolar diffusion. (C) 1997 Elsevier Science Ltd.