RESISTIVE AND DIAMAGNETIC TRANSITION AT 2 50-K IN A CUPRATE FILM DEPOSITED ATOMIC LAYER BY ATOMIC LAYER

The lamellar structure of superconducting cuprates in principle allows them to be deposited by Sequentially Imposed Layer Epitaxy (SILE). We describe here the properties of a film of artificial cuprate compound deposited by this technique. This compound belonging to the BiSrCaCuO family presents a resistivity drop of more than four orders of magnit ude below 250 K. A diamagnetic transition is observed below 290 K by m easurement of the AC susceptibility, and by measurement of the magneti sation although the measured value is close to the sensitivity limit. Additional observed features like the strong non-linearity of the volt age-current characteristics and a diamagnetic hysteresis allow to prop ose the superconductivity at 250 K, as a plausible explanation of the properties of this compound.