M. Lagues et al., RESISTIVE AND DIAMAGNETIC TRANSITION AT 2 50-K IN A CUPRATE FILM DEPOSITED ATOMIC LAYER BY ATOMIC LAYER, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 318(5), 1994, pp. 591-596
The lamellar structure of superconducting cuprates in principle allows
them to be deposited by Sequentially Imposed Layer Epitaxy (SILE). We
describe here the properties of a film of artificial cuprate compound
deposited by this technique. This compound belonging to the BiSrCaCuO
family presents a resistivity drop of more than four orders of magnit
ude below 250 K. A diamagnetic transition is observed below 290 K by m
easurement of the AC susceptibility, and by measurement of the magneti
sation although the measured value is close to the sensitivity limit.
Additional observed features like the strong non-linearity of the volt
age-current characteristics and a diamagnetic hysteresis allow to prop
ose the superconductivity at 250 K, as a plausible explanation of the
properties of this compound.