HBT power amplifier serves CDMA needs

GALLIUM-ARSENIDE (GaAs)-based power amplifiers (PAs), whether for commercia l, military, or space applications, have almost always been designed with d epletion-mode technologies, such as metal-epitaxial-semiconductor field-eff ect-transistor (MES-FET) or high- electron-mobility-transistor (HEMT) techn ologies. But heterojunction-bipolar-transistor (HBT) technology, especially when teamed with an indium-gallium-phosphide (InGaP) on GaAs semiconductor process, can provide outstanding linearity and efficiency with the power r equirements of advanced code-division-multiple-access (CDMA) systems.