Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

Authors
Saveliev, V Golovin, V
Citation
V. Saveliev et V. Golovin, Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures, NUCL INST A, 442(1-3), 2000, pp. 223-229
Citations number
4
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
442
Issue
1-3
Year of publication
2000
Pages
223 - 229
Database
ISI
SICI code
0168-9002(20000311)442:1-3<223:SAPOTB>2.0.ZU;2-O
Abstract
The development of a high quantum efficiency, fast photodetector, with inte rnal gain amplification for the wavelength range 450-600 nm is one of the c ritical issues for experimental physics - registration of low-intensity lig ht photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10(5)-10(6)) has been designed, manufactured and t ested for registration of visible light photons and charge particles. The m ain features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the "needle" pn-jun ction and negative feedback for stabilization of avalanche process due to r esistive layer. (C) 2000 Elsevier Science B.V. All rights reserved.