Microchannel plates (MCP) fabricated from standard silicon wafer substrates
using a novel silicon micromachining process, together with standard sihco
n photolithographic process steps, are described. The resulting SiMCP micro
channels have dimensions of similar to 0.5 to similar to 25 mu m, with aspe
ct ratios up to 300, and have the dimensional precision and absence of inte
rstitial defects characteristic of photolithographic processing, compatible
with positional matching to silicon electronics readouts. The open channel
areal fraction and detection efficiency may exceed 90% on plates up to 300
mm in diameter. The resulting silicon substrates can be converted entirely
to amorphous quartz (qMCP). The strip resistance and secondary emission ar
e developed by controlled depositions of thin films, at temperatures up to
1200 degrees C, also compatible with high-temperture brazing, and can be es
sentially hydrogen, water and radionuclide-free. Novel secondary emitters a
nd cesiated photocathodes can be high-temperature deposited or nucleated in
the channels or the first strike surface. Results on resistivity, secondar
y emission and gain are presented. (C) 2000 Elsevier Science B.V. All right
s reserved.