Study of the effect of different plasma-enhanced chemical vapour deposition reactor configurations on the properties of hydrogenated amorphous silicon thin films

In this work we present a study performed in a plasma-enhanced chemical vap our deposition reactor, where different rf electrode configurations were us ed with the aim of achieving conditions that lead to growth of highly unifo rm amorphous silicon films, with the required electronic quality, at high g rowth rates. This study consists in determining the plasma characteristics under different electrode configurations, in an argon plasma, using as diag nostic tools a Langmuir probe and impedance probe. These results were corre lated with the hydrogenated amorphous silicon films produced, thereby allow ing us to establish the best electrode configuration to grow electronic-gra de-quality amorphous silicon films.