A local interaction simulation approach to the analysis of thin-film growth

Citation
M. Scalerandi et al., A local interaction simulation approach to the analysis of thin-film growth, PHIL MAG B, 80(4), 2000, pp. 507-514
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICSELECTRONIC OPTICAL AND MAGNETIC PROPERTIES
ISSN journal
13642812 → ACNP
Volume
80
Issue
4
Year of publication
2000
Pages
507 - 514
Database
ISI
SICI code
1364-2812(200004)80:4<507:ALISAT>2.0.ZU;2-G
Abstract
Several models have been developed for studying growth patterns and the for mation of rough surfaces and interfaces. An analytical treatment of these m odels, leading to a prediction of the time evolution of the system, is, how ever, usually inadequate to describe the properties of the bulk of the depo sited film. As a consequence, numerical simulations become the only viable alternative. In this contribution we present st preliminary model, based on the local interaction simulation approach, for the description of thin sem iconducting films growth. The proposed approach allows us to include in the model all kinds of local mechanisms and/or non-trivial boundary conditions . A few numerical results are presented, showing good qualitative agreement with experimental data. Reliable simulations with a very good resolution m ay be performed in a reasonable central processing unit time, if parallel p rocessing is adopted.