Several models have been developed for studying growth patterns and the for
mation of rough surfaces and interfaces. An analytical treatment of these m
odels, leading to a prediction of the time evolution of the system, is, how
ever, usually inadequate to describe the properties of the bulk of the depo
sited film. As a consequence, numerical simulations become the only viable
alternative. In this contribution we present st preliminary model, based on
the local interaction simulation approach, for the description of thin sem
iconducting films growth. The proposed approach allows us to include in the
model all kinds of local mechanisms and/or non-trivial boundary conditions
. A few numerical results are presented, showing good qualitative agreement
with experimental data. Reliable simulations with a very good resolution m
ay be performed in a reasonable central processing unit time, if parallel p
rocessing is adopted.